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双管正激式

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SiC

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GaN FETs

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新型封装

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极宽温度范围

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耐高温变换器

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GaN

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温控模型

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氮化家

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软开关

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碳化硅器件

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碳化硅（SiC）

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宽禁带器件

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synchronous buck converter

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GaN transistor

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氮化家器件

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硬开关

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MOSFET

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Silicon Carbide (SiC)

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平面变压器

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作者

吴新科

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付大丰

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陈才

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黄志钊

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盛况

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曹鸿

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张墨

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葛小伟

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ZHANG Bo

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ZHOU Qi

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SHI Yijun

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CHEN Wanjun

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HU Guanhao

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傅大丰

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陈材

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方建明

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黄志召

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李宇雄

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许津铭

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王卫

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当前 1 - 10 , 共 19 条记录

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双馈风电机组并网次同步振荡研究会员

期刊论文

作者：禹华军

页码： 147 - 151

摘要

2016/01/01

17

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首先基于次同步振荡理论，研究了双馈风电机组在弱电网并网情况下的机组脱网问题。研究发现，输电线路的串补投入和变流器控制策略对低频振荡敏感的因素导致了次同步振荡的发生；然后提出一种在网侧变流器中加入带阻尼特性的特定滤波器策略，该策略能够有效抑制风电机组与电网之间的振荡；最后，仿真结果验证了该方法的有效性。
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高压SiC器件在FREEDM系统中的应用会员

期刊论文

作者：倪喜军 , Ni Xijun

页码： 139 - 146

摘要

2016/01/01

16

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The silicon carbide (SiC) is one of the most mature researched wide bandgap semiconductor material now, therefore, it has been become the research hot spot in the high voltage, high temperature, and high frequency power region. According to the practical productions and applications, in this paper the present research status and applied prospects of these devices is demonstrated in the Future Renewable Electric Energy Delivery and Management (FREEDM) Systems Center, which maintains close cooperation with the biggest SiC device manufacturer—Cree, Inc. Then the applications of several high voltage SiC devices are emphasized particularly on MOSFET, IGBT, ETO, and JFET, which are applied to solid state transformer and fault isolation device, and so on. At present, FREEDM Systems Center has developed several generations of SST and FID based on their intrinsic characteristics of these devices. What's more, it has gained a lot of important research results, acting as research leader of the high voltage SiC device.
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耐高温变换器研究进展及综述会员

期刊论文

作者：谢昊天 , 秦海鸿 , 董耀文 , 徐华娟 , 付大丰 , 严仰光

页码： 128 - 138

摘要

2016/01/01

22

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耐高温变换器在多电飞机、电动汽车和石油钻井等恶劣环境中具有十分重要的应用价值。碳化硅功率器件具有高结温工作能力、较低损耗以及良好的温度稳定性，有利于实现耐高温变换器。首先简要阐述了耐高温变换器的应用领域和SiC基耐高温变换器各组成部分的技术发展现状，再介绍了SiC基耐高温变换器应用实例，最后探讨了SiC基耐高温变换器的关键问题和发展前景。
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宽禁带器件在电动汽车中的研究和应用会员

期刊论文

作者：董耀文 , 秦海鸿 , 付大丰 , 傅大丰 , 徐华娟 , 严仰光

页码： 119 - 127

摘要

2025/01/01

19

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After a long period of development, power devices based on silicon material exhibit some unavoidable physical limitations which limit the improvement of performance of silicon based power converters. Power electronics devices based on silicon carbide and gallium nitride present more promising performance as a consequence of their outstanding properties and represent the new development trend of power electronic devices. First, the requirement of the power electronic converters are introduced in electric vehicles this paper, and the development of wide band gap device. Then, the research status of wide band gap devices in electric vehicles was analyzed and prospected. Finally, the main problems of wide bandgap devices in the application of electric vehicles are pointed out.
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共源极电感对SiC MOSFET开关损耗影响的研究会员

期刊论文

作者：董泽政 , 吴新科 , 盛况 , 张军明

页码： 112 - 118

摘要

2025/01/01

25

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共源极电感同时存在于功率MOSFET的功率回路和门极驱动回路中，影响器件的开关特性和开关损耗。共源极电感的影响将随着器件开关速度和开关频率的提高而显得更为严重。碳化硅（SiC）MOSFET相对于硅器件的材料优势使其可以实现更快速的开关过程，共源极电感的影响更加需要考虑。首先分析了现有功率开关损耗测量方法的优劣，然后选用一种通过测量结温升和热阻的方法来测量SiC MOSFET的开关损耗，最后搭建了一台输出功率1 kW、输出电压800 V的全碳化硅Boost样机，从100 kHz到500 kHz进行实验验证。实验结果表明，当不含共源极电感时SiC MOSFET的开通损耗、关断损耗均有所减小。
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基于封装集成技术的高功率密度碳化硅单相逆变器会员

期刊论文

作者：李宇雄 , 黄志召 , 黄志钊 , 方建明 , 陈材 , 陈才 , 康勇

页码： 103 - 111

摘要

2016/01/01

36

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With the increasing demand for single phase inverter with high power density in household photovoltaic system, electric vehicle (EV) and aerospace, a single phase inverter with high power density is presented in this paper based on a new type of silicon carbide (SiC) power integration module. The single-phase inverter uses DC Boost APF instead of DC side capacitance to absorb the low frequency ripple which can reduce the volume of decoupling capacitance; utilizes wide band gap devices SiC whose advantages is less loss, a high switching frequency and increases switching frequency of boost APF and inverter up to 100 kHz, which can further reduce the size of the passive components; and puts forward a novel SiC half bridge hybrid packaging structure with high power density and low stray inductance, which is only 10 mm × 20.5 mm in size and can greatly reduce the stray inductance so that the stress of switching devices, switching loss and EMI can be significantly reduced; uses direct cooling structure and optimizes heat sink and heat flow design, which makes the device realize efficient heat dissipation. Finally, based on packaging integration technology, a single-phase inverter with high power density is developed whose power is 2 kW, power density is 58.8 W/in³, CEC efficiency reaches 97.3%, maximum efficiency reaches 98.3%.
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基于GaN器件LLC谐振变换器的平面变压器优化设计会员

期刊论文

作者：谭琳琳 , 王康平 , 宇文甸 , 杨旭

页码： 96 - 102

摘要

2025/01/01

21

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现代开关电源的发展呈现高效率和高功率密度的趋势。基于GaN器件LLC谐振变换器，采用同步整流技术，通过平面变压器的设计和结构优化大大减小了变换器的高度和体积，同时也减少损耗，提高了系统的功率密度和效率。搭建了1 MHz/120 W同步整流LLC谐振变换器硬件电路，对设计进行了实验验证。样机的功率密度达到了262 W/in³，最高效率达到了94.9%。

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基于GaN器件Buck电路死区功耗分析与优化会员

期刊论文

作者：胡官昊 , 陈万军 , HU Guanhao , CHEN Wanjun , 施宜军 , 周琦 , SHI Yijun , ZHOU Qi , 张波 , ZHANG Bo

页码： 90 - 95

摘要

2025/01/01

38

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GaN-based power device is expected to be widely used in power converter system, owing to its superior characteristics of high-speed and high-efficiency, it is important that the dead-time related loss of GaN-based HEMT devices have negative impact on improving system efficiency in application of buck converter. In order to accurately assess the influence of the dead-time related loss on converter efficiency, analytical model combined with simulation results for dead-time related loss of GaN-based devices upon power converter system has been discussed and optimized in this letter. The different operating principle of buck converter system is discussed in Si-MOSFET and GaN HEMT and the mechanism of dead-time related loss is analyzed, respectively. For a converter of input voltage 12 V to output voltage 12 V, load current 20 A operating at a switching frequency of 700 kHz, the optimal efficiency is 92% under the conditions of Td is 20 ns, Te is 0 ns.
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基于GaN FETs的高频半桥谐振变换器分析与设计会员

期刊论文

作者：管乐诗 , 卞晴 , 刘宾 , 王懿杰 , 张相军 , 徐殿国 , 王卫

页码： 82 - 89

摘要

2025/01/01

21

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随着Si材料半导体器件性能逐步达到瓶颈，宽禁带半导体器件（GaN、SiC）在诸多方面展现出了很好的性能，如低导通阻抗、小输入、输出电容等，这些特性使得GaN和SiC器件能够应用在更高的开关频率条件下，从而提高系统的功率密度。针对基于GaN FETs构成的高频半桥谐振变换器进行设计，分析了高频条件下寄生电感参数对系统驱动电压及漏源极电压的影响，同时分析了高频条件下系统电压电流测量所需注意的事项及影响因素，为高频条件下GaN FETs的应用提供一定的帮助。
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99.2% Efficiency ZVS Single-phase PFC Rectifier with SiC MOSFET 会员

期刊论文

作者：严阳 , YAN Yang , 吴新科 , WU Xinke , 盛况 , SHENG Kuang

页码： 73 - 81

摘要

2025/01/01

34

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Half bridge power factor correction topology is one of the bridgeless power factor correction topologies; it can achieve high efficiency due to its simple structure and fewer devices in the current loop. However, the voltage stress of devices in this kind of topology is relatively high. If the silicon IGBT is used in this topology, it will be hard to improve the efficiency because of its high switching loss. The silicon carbide MOSFET can keep the lower on-state resistance at high voltage, and also has lower switching loss. In this paper, the silicon carbide MOSFET is used to work at a triangular current mode (TCM), which achieves zero voltage switching mode to further reduce the switching loss. In this way, the calculation of all the key parameters is described in detail in this paper, and a 1100 W prototype is built, which achieves high efficiency, and the peak efficiency reaches 99.2%.
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电源学报 2016年07月 第14卷 第4期

电源学报 2016年07月第14卷第4期