The silicon carbide (SiC) is one of the most mature researched wide bandgap semiconductor material now, therefore, it has been become the research hot spot in the high voltage, high temperature, and high frequency power region. According to the practical productions and applications, in this paper the present research status and applied prospects of these devices is demonstrated in the Future Renewable Electric Energy Delivery and Management (FREEDM) Systems Center, which maintains close cooperation with the biggest SiC device manufacturer—Cree, Inc. Then the applications of several high voltage SiC devices are emphasized particularly on MOSFET, IGBT, ETO, and JFET, which are applied to solid state transformer and fault isolation device, and so on. At present, FREEDM Systems Center has developed several generations of SST and FID based on their intrinsic characteristics of these devices. What's more, it has gained a lot of important research results, acting as research leader of the high voltage SiC device.