Half bridge power factor correction topology is one of the bridgeless power factor correction topologies, it can achieve high efficiency due to its simple structure and less devices in of current loop. However, the voltage stress of devices in this kind of topology is relatively high. If the silicon IGBT is used in this topology, it will be hard to improve the efficiency because of its high switching loss. The silicon carbide MOSFET can keep the lower on-state resistance at high voltage, and also has lower switching loss. In this paper, the silicon carbide MOSFET is used, to work at a triangular current mode (TCM) which achieves zero voltage switching mode to further reduce the switching loss. In this way, the calculation of all the key parameters is described in detail in this paper, and a 1100W prototype is built, which achieves high efficiency, and the peak efficiency reaches 99.2%.