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关键词

有限元分析

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短路能力

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短路测试

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热应力

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H桥逆变器

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状态监测

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阿伦尼乌斯模型

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工况剖面

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先兆参量

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加速老化

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热循环

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MOSFET

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直流锯齿波调制

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失效机理

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结温

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电阻率温度系数

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estimation method

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temperature sensitive electrical parameters (TSEP)

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可靠性模型

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集电极电流下降率：不可控性

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作者

王小浩

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李志刚

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徐亚辉

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李玲玲

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王怀

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董继青

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徐志旺

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于珊

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孙鹏菊

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杜雄

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马珂

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刘辉

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王怀

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彭英舟

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王海波

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龚灿

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WEL Kexin

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TANG Jilin

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LI Bao

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DU Mingxing

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获取方式

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当前 1 - 10 , 共 21 条记录

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基于键合线压降的IGBT模块内部缺陷监测研究会员

期刊论文

作者：龚灿 , GONG Can , SUN Pengju , 孙鹏菊 , DU Xiong , 杜雄 , 王海波 , WANG Haibo , PENG Yingzhou , 彭英舟 , 周雒维 , ZHOU Luowei

页码： 153 - 162

摘要

2016/01/01

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In order to accurately evaluate the health level of insulated gate bipolar transistor (IGBT), detect and replace the defective IGBT modules timely, and improve the reliability of power converter, a novel prognostic method for defects inside IGBT module based on the voltage drop of bond wires is presented in this paper with principle and characteristic. The ageing state of bond wires inside IGBT module is diagnosed by the changes of equivalent voltage drop of bond wires on a single chip, and then judge the health level of IGBT module. Experiment result shows that condition monitoring for defects inside IGBT modules based on voltage drop of bond wires can accurately identify the ageing process of bond wires. This method not only diagnoses the defect that all bond wires liftoff on one chip, but also recognizes the condition that part of bond wires liftoff on one chip. It has been greatly improved in terms of accuracy compared with the condition monitoring method by the use of gate signal. This method provides a theoretical support for the maintenance of power converter and can reduce the system maintenance costs.
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基于三相电流残差的功率管多管开路故障诊断会员

期刊论文

作者：王亚飞 , 田子思 , 葛兴来

页码： 143 - 152

摘要

2016/01/01

16

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牵引逆变器是电力牵引交流传动系统的重要组成部分，它的可靠性直接影响着机车的安全稳定运行，其主电路功率管（IGBT）是最易发生故障的部分。针对IGBT的多管开路故障，提出了一种基于三相电流残差的多管开路故障快速在线诊断方法；通过分析牵引逆变器在正常条件和各开路故障类型下的三相电流，得出了发生多管开路故障情况下的三相电流残差特征；利用控制系统中的电流给定信号重构参考三相电流与实测电流进行运算，并根据三相电流残差特征进行故障定位。最后给出了半实物实验结果，验证了该诊断方法能够快速实现IGBT单管及双管开路故障诊断，且不受闭环控制和负载扰动影响。
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基于载流子抽取模型的Trench Gate/Field-stop IGBT驱动器有源箝位功能分析会员

期刊论文

作者： CHEN Yuxiang , 陈玉香 , 罗皓泽 , LUO Haoze , LI Wuhua , 李武华 , 何湘宁 , HE Xiangning

页码： 136 - 142

摘要

2016/01/01

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考虑到Trench gate/Field-stop IGBT模块集电极电流下降率不可控的特点，本文引入载流子抽取模型来描述IGBT关断过程中集电极电流下降阶段的存储载流子动态行为。在此模型基础上，分析了专为适配该类IGBT特殊关断特性的驱动器中集成的有源箝位电路的功能机理。此外，阐明了所提出的载流子抽取模型在分析器件与电路相互作用中的关键作用，为后续器件优化设计奠定了基础。
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IGBT 功率模块加速老化方法综述会员

期刊论文

作者：李亚萍 , 周雒维 , 孙鹏菊

页码： 122 - 135

摘要

2025/01/01

20

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功率变流器的可靠性评估和寿命预测已经成为非常重要的研究课题。IGBT 功率模块的大量使用在诸多领域里越来越广泛，它们的失效主要由热机械疲劳引起，而在正常工作运行时，这种疲劳老化过程很漫长。因此，为全面观察和探究功率模块的疲劳老化失效过程，需要设计加速老化试验以缩短研究周期。最普遍的老化试验方法是对器件施加热应力和电应力，对器件不断热冲击实现加速老化进程的目的。文中主要归纳分析了各种加速老化方法的目的和差别，并重点总结了功率循环加速老化方法在不同试验条件、失效方式、试验持续时间、试验电路设计、监测的电气参数和热参数等方面的不同，目的在于提出加速老化方法的一般步骤和需要考虑的问题。最后根据这些问题对加速老化方法的研究进行了展望，为 IGBT 功率模块乃至整个变流器系统的失效机理分析、可靠性分析、寿命预测、健康状态评估和状态监测的研究奠定了基础。
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功率MOSFET寿命模型综述会员

期刊论文

作者：查晓明 , 刘悦遐 , 黄萌 , 刘懿

页码： 108 - 121

摘要

2016/01/01

23

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MOSFET是实现电力电子装置功能的核心器件，但其寿命短是制约电力电子系统可靠性的关键因素。由老化造成的MOSFET失效分为封装失效和参数漂移失效，前者由MOSFET制造工艺及材料导致的缺陷在工作环境中恶化而产生，后者为器件在使用过程中其内部微观退化机制在宏观参数的体现。对目前已有的MOSFET寿命相关的研究成果进行总结，分析了MOSFET的各类失效模式，并建立了各类失效模式下MOSFET寿命模型；并进一步总结了各类失效模式下寿命模型的失效判据及其各类寿命预测模型实验验证方法。
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电力电子系统可靠性模型综述会员

期刊论文

作者：张璇 , 张轩宇 , 耿佳勇 , 耿嘉勇 , 曾德银 , 韩宗耀 , 韩宗尧 , 魏涛涛 , 汪鑫 , 王鑫磊

页码： 107 - 107

摘要

2016/01/01

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近年来，电力电子产品已广泛应用于工业生产和日常生活中，其可靠性受到越来越多的关注。随着科学技术的飞速发展，可靠性研究也期望得到进一步发展。它不仅关乎产品质量，更关系到企业及国家的经济效益和用户的安全，因为它是产品安全性的评估指标。本文主要介绍了开展电力电子系统级可靠性建模的方法、建模步骤以及常用于分析产品可靠性的模型。主要步骤包括故障分析、选择失效判据、选择可靠性模型及定量计算与评估。故障分析是可靠性分析的基础。通过故障分析，可获得系统的主要故障类型，并依据失效判据估计系统在故障下的状态。根据系统的规模、精度要求及应用场合选择合适的模型，有助于获得准确的评估结果。建模后可计算评估指标，对系统的可靠性进行分析与总结。本文介绍了四种常用的系统级可靠性模型，并对其特点及应用进行了归纳总结。最后，文章总结了主要工作及存在的不足，并给出了一些展望。
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面向可靠性的Buck输出侧LC滤波器设计会员

期刊论文

作者：刘懿 , LIU Yi , HUANG Meng , 黄萌 , 王怀 , WANG Huai , ZHA Xiaoming , 查晓明 , 宫金武 , GONG Jinwu , SUN Jianjun , 孙建军

页码： 93 - 98

摘要

2016/01/01

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State-of-the-art LC filter design of Buck DC-DC converter is based on the specifications of voltage and current ripples and constraints in power density and cost. Since lifetime is an important performance factor in reliability critical applications, this digest proposes a method to optimize the design of the LC filters from a reliability perspective among other considerations. It investigates the design freedom between the values of inductor and capacitors, the physical formation of the LC network, and the corresponding electro-thermal stresses of the selected capacitors. The outcome enables an optimized LC filter design to fulfill the required lifetime. The theoretical analysis and simulation study are presented which are verified by the experimental results from a Buck converter prototype.
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开关电源中电解电容寿命预测分析会员

期刊论文

作者：俞珊 , 徐志望 , 于珊 , 徐志旺 , 董纪清 , 董继青

页码： 87 - 92

摘要

2025/01/01

37

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Electrolytic capacitors are essential key components of energy storage and power conversion in the switching power supply products. However, relative to the other electronic components, life prediction for them is shortest in high ripple current and high-temperature power conversion applications. Thus, electrolytic capacitor restricts the electrical life of the product. First, based on the internal structure and the failure mechanism of electrolytic capacitor, this paper points out that temperature is the most important factor in the evaporation rate of the electrolyte, and analyzes the influences of ambient temperature and ripple current on the life of electrolytic capacitor respectively. Finally, taking the PFC bus electrolytic capacitor of 240 W high-frequency switching power supply prototype for example, the estimated life of capacitor meets the requirements of product specification through two ways to measure capacitor internal temperature.
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气温波动对风电变流器中功率器件寿命消耗的影响会员

期刊论文

作者：张军 , ZHANG Jun , DU Xiong , 杜雄 , 孙鹏菊 , SUN Pengju , ZHOU Luowei , 周雒维

页码： 80 - 86

摘要

2016/01/01

17

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Power devices in the wind turbine power converter system suffer from two-scale thermal loadings, the fundamental frequency thermal cycling and low frequency thermal cycling and these thermal loadings introduce different consumed lifetimes. Furthermore, the fluctuation of ambient temperature influences the thermal loadings. Therefore, accurate lifetime estimation should consider the ambient temperature. However, previous studies limited by the calculation of junction temperature only consider the mission profile of wind speed but not ambient temperature. This paper adopts the Bayerer lifetime model to evaluate the effect of ambient temperature on the consumed lifetime of power semiconductors based on a numerical junction temperature calculation method considering the actual ambient temperature and wind speed of Lauswiesen and Valkenburg in 2015. Studies show that long-term fluctuation of ambient temperature increases the consumed lifetime of device, and the fluctuation of ambient temperature mainly influences the consumed lifetime due to low frequency thermal cycling, but have little effect on the consumed lifetime due to fundamental frequency thermal cycling.
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SiC MOSFET静态性能及参数温度依赖性的实验分析及与Si IGBT的对比会员

期刊论文

作者：马青 , MA Qing , RAN Li , 冉立 , 胡博容 , HU Borong , ZENG Zheng , 曾正 , 刘清阳 , LIU Qingyang

页码： 67 - 79

摘要

2016/01/01

38

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As a new power electronic device, silicon carbide (SiC) MOSFET has unique electrical characteristics in comparison with Si IGBT, but its static performances and parasitic characteristics in a wide temperature range are still unclear. This paper concentrates on SiC MOSFET and compares with Si IGBT. Based on the working principles of these two kinds of devices, the characteristics affected by temperature are analyzed, and these characteristics including threshold voltage, conduction resistance, leakage current, output characteristics and body diode characteristics have also been accurately measured with junction temperature changing from -55°C to 165°C. The experimental results are shown to be in consistence with previous theoretical analysis. Built on the experiment results, this paper further studies the temperature sensitivity of all these performance parameters, and it is found that the static performance and parasitic characteristics of a SiC MOSFET strongly rely on temperature, and this can be more pronounced than in the case of a Si IGBT. This characteristic provides the theoretical basis for measuring device junction temperature and condition monitoring for SiC MOSFET-based power electronics systems.
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电源学报 2016年11月 第14卷 第6期

电源学报 2016年11月第14卷第6期