Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have found wide applications because of their superior electrical and thermal properties. However, bias temperature instability (BTI) hindered their development. In this paper, the effect of short-circuit (SC) events on BTI of SiC MOSFETs is investigated. It is found that both positive and negative BTI (PBTI and NBTI) will recover when the device is subjected to SC stress, regardless of whether it is planar or trench gate, and that the higher SC energy, the greater BTI recovery. Excessive SC energy may excite new defects and aggravate the threshold voltage drift. These results provide new ideas for suppressing BTI of SiC MOSFETs in practical application.