Silicon Carbide exhibited great potential in the application of high temperature, high voltage and high frequency power electronic circuits. In order to reflect the transfer characteristics of SiC MOSFETs more accurately in wide temperature range, a simplified SiC MOSFET Spice model including the temperature dependent source is proposed. The threshold voltage of the device in a wide temperature range and coefficient transconductance is compensated by temperature dependent source. Based on the simulation software LTspice, the transfer characteristics of SiC MOSFET in 25°C and 125°C were carried out in with the new model, and the simulation results are compared with the measured data. The conformity of the simulation and experimental results are further improved compared with that of the traditional model, the accuracy and validity of the model are verified and provide the scientific basis for the application of the device in the future.