This paper proposes a temperature monitoring method for press pack insulated gate bipolar transistor (PP-IGBT) based on digital twin (DT). Firstly, a temperature monitoring method for PP-IGBT based on DT is proposed. Secondly, the PP-IGBT DT for temperature monitoring is constructed. Finally, the performance of the PP-IGBT DT is analyzed and compared to the existing temperature monitoring method for PP-IGBT. Unlike the conventional temperature monitoring method for PP-IGBT, the proposed method realises a comprehensive monitoring of the temperature of PP-IGBT device, making it have great application potential in device temperature monitoring and reliability evaluation.