High power density is one of the development directions of photovoltaic systems. In order to achieve this goal, the efficiency of converters should be further improved; the loss of power devices should be further reduced; and the volume of the AC side filter should be further reduced by increasing the switching frequency. However, the performance of Si-based converters cannot well meet the development requirements. A clear trend in today 's research is to increase the switching frequency and reduce power device losses by using wideband gap(WBG) devices which have much lower switching losses. Nowadays, the manufacturing process of SiC devices is gradually matured. But the latest price of SiC device is still several times higher than that of Si device, which limits its wide application. Thus, it is more practical to replace only a part of the devices in a converter with SiC MOSFETs. This paper presents two application schemes for SiC& Si hybrid modules to reduce losses, increase switching frequency, and increase power density based on three-level ANPC topology. Scheme 1 is the topology with four SiC MOSFETs and two Si IGBTs. Scheme 2 is the topology with two SiC MOSFETs and four Si IGBTs. The modulation strategies applicable to the two schemes are illustrated respectively, and the losses of the two schemes are analyzed and compared. This article also proposes a new calorimetric loss measurement method. The proposed measurement device is simple with just a cuboid metal block and two thermocouples. The steady state temperature difference of the cuboid metal block is chosen as the measurement value, ignoring the effects of ambient temperature changes and easy to achieve accurately. Thermal-circuit model are established to explain the proposed measurement principle. Based on a comprehensive consideration of the loss and cost of the two schemes, this paper optimizes one of the schemes to perform a loss measurement experiment using the proposed loss measurement method.