When there is failure in press-pack IGBT power device, the instantaneous energy of failure will lead to device explosion, which will damage the adjacent equipment with the explosion debris. By taking the 4500 V/3000 A silicon-based IGBT press-pack module as the research object, the paper studies the instantaneous explosion situation when the device fails, statistically analyzes the morphology and characteristics of the failed device, and evaluates the explosion-proof characteristics of the packaging structure of the crimp-type IGBT device through MMC working condition experiment. In addition, it applies the finite simulation software Abaqus and establishes the numerical calculation model of packaging structure, so as to simulate the structural response and failure process under the electric discharge explosion. The experiment determines that most of the failed sub-units are located on the periphery of the device, and the shock wave further causes the skirt-like burst of the ceramic shell. According to the discharge energy information and structural failure characteristics, the electric explosion load is equivalent to a certain equivalent of explosive explosion simulation, and the structure response and failure law under different explosion energy are obtained. The results show that the corner position of the square shell is more severely damaged due to stress concentration explosion. Moreover, traditional ceramic shell materials are brittle, which will intensify the explosive effect and is not conducive to explosion-proof applications.