This letter introduces an equivalent model including the parasitic parameters analysis of SiC MOSFETs in order to enhance their performance for high power density applications. The model is used to establish a mechanism that evaluates the effect of drive parameters on switching losses and electrical stress of power devices, providing a theoretical basis for optimizing the design of drive parameters. Using this mechanism, the letter finds the Pareto solution of the multi-objective optimization model through iterative calculation of design variables. The methodology is validated through experimental results from a SiC power prototype, showing an efficiency of 98.9% and safe electrical stress levels under 1500 V/100 kW operating conditions.