Silicon carbide (SiC) MOSFETs have found extensive application in power electronics owing to its superior performance. The turn-off of the SiC MOSFET at 0 V gate voltage simplifies gate drive circuit design, lowers system costs, and enhances reliability. However, the parasitic false turn-on (PTO) remains a critical challenge that impacts the feasibility of 0 V gate voltage turn-off for SiC MOSFET. This paper analyzes the underlying principles of PTO behavior and experimentally demonstrates the influencing factors, including gate turn-off resistance, junction temperature, and drain-source voltage rising speed. This study conclusively establishes a relationship for matching drive resistance, crucial for ensuring the reliable operation of 0 V gate voltage turn-off.