This paper evaluates the thermal characterization of late generation SiC Schottky diodes. 600 V/650 V SiC diodes from 3 well-known manufacturers are tested: Wolfspeed, Infineon and Rohm. A comprehensive study is performed for a wide temperature range from 20 °C (room temperature) up to 500 °C, aiming to find the absolute maximum parameters of SiC Schottky diodes at extremely high temperature environments. Both static and dynamic characterizations are evaluated and explained. TCAD simulations are proposed to express the abnormal phenomenon occurred in test results, especially the mechanism of hole carrier transportation in extremely high temperature. This work exhibits the performance of SiC Schottky diodes for high temperature application conditions.