Compared with traditional silicon devices, silicon carbide (SiC) device has outstanding advantages in high frequency, high voltage and high temperature applications. At present, most commercially available SiC devices are low voltage and low power SiC MOSFETs, the dynamic performance of high-voltage and high-current power modules is seldom reported. The dynamic performances of a newly developed SiC MOSFET module under different test environments are studied. The related gate drive for this high voltage SiC module is also discussed. From the aspects of driving resistance Rg, operating junction temperature Tj, load current Id, bus voltage Vds, the dynamic characteristics of a 6.5kV/400A SiC MOSFET are fully evaluated. The experimental results will help to optimize the device design and engineering application for high-voltage, high-current SiC devices.