欢迎来到中国电源学会电子资源平台
会员 3D Thermal Resistance Model for Real-Time Temperature Monitoring of Multi-Chip IGBT Modules
  • 7
  • 0
  • 0
  • 0
  • 2023/01/01
摘要
Medium-voltage and high-capacity converters are vital for new energy generation, petroleum metallurgy, and electrical drives. Their long equipment service life and high cost make the reliability enhancement of them crucial. Among various failure factors in large-capacity converters, the failure of Insulated Gate Bipolar Transistor(IGBT) modules due to temperature-related issues is the most significant component. Therefore, real-time temperature monitoring of IGBT modules is one of the key means to improve the reliability of large-capacity converters. To reduce the influence of material temperature variations, aging, and power loss calculation errors on the junction temperature estimated by the thermal resistance model, the researchers are increasingly paying attention to the temperature observer, which imposes requirements on the observability of the model’s state space. A hybrid thermal resistance is proposed to solve the problem that existing thermal resistance models cannot simultaneously achieve high accuracy and strong observability for air cooling IGBT modules. The proposed model exhibits an error of less than 5% compared to finite element analysis. The lumped thermal resistance model for IGBT in this paper can be implemented in the controller to monitor the 3D temperature distribution in real-time, and can serves as the basis for a temperature observer.
  • 若对本资源有异议或需修改,请通过“提交意见”功能联系我们,平台将及时处理!
来源
关键词
相关推荐
可试看前3页,请 登录 后进行更多操作
试看已结束,会员免费看完整版,请 登录会员账户 或申请成为中国电源学会会员.
关闭
温馨提示
确认退出登录吗?
温馨提示
温馨提示
温馨提示
确定点赞该资源吗?
温馨提示
确定取消该资源点赞吗?
温馨提示
确定收藏该资源吗?
温馨提示
确定取消该资源收藏吗?
温馨提示
确定加入购物车吗?
温馨提示
确定加入购物车吗?
温馨提示
确定移出购物车吗?