At present, the researches on high-power IGBT devices mainly solve the problems of uniformities of electric currents, temperatures, and stresses between different chips caused by multi-chip parallel connection. However, there are few studies on the uniformity of the current distribution within a single chip and its influencing factors. This paper analyzes the current distributions within the press pack IGBT chips from four aspects: different contact surfaces between the chip and molybdenum sheet, different on-resistances of the cells, different temperature distributions, and different pressure distributions. This study provided technical guidance for the design of press pack IGBT chips and devices.