The paper presents a gate driver for current-control power semiconductor devices such as BJT. The gate driver has a capability to reduce switching time duration of a power transistor, both in turn-on and turn-off transients. Besides, when the transistor is in static conduction periods, the driver gives a high driving current to the power transistor with holding up by a low supply voltage. This leads to reduced power losses of the driver and switching losses of the transistor. Then, an efficient switching process happens with the whole power switching unit. The paper provides PSpice simulated switching results using a manufacturer provided 1.2 kV SiC BJT model to confirm the feasibility of the proposed driver and compare it with a conventional unipolar driver. The results are in good agreement with the theoretical prediction.