In this paper, a high-voltage SiC MOSFET module with series-parallel hybrid topology is presented and analyzed. The module consists of two uniform parts in parallel and each of the parts includes three sub-parts in series. The sub-part contains three primary parts connected in string, where each of these parts has a parallel of two SiC MOSFETs. These SiC MOSFETs are divided into six sub-modules, which are driven by a common driving signal. A 10 kV/200 A SiC MOSFET module is fabricated based on this hybrid topology with thirty-six 1200 V/40 A SiC MOSFET chips. The dynamic switching behavior of the module is tested and analyzed at 5400 V/200 A with a switching speed of 440 ns in the turn-on process and 250 ns in the turn-off process.