This paper presents modeling and stability analysis for IGBT switching transient behaviors is used, but stability issues are not discussed. Stability and robustness analysis for different IGBT modules are analyzed in [11] using Bode plots and root locus plots. As the parameters of the various IGBT modules under test are different, it is hard to evaluate the influence of the specific parameter. The compensation method in [11] by increasing the gate-emitter capacitance improves the stability of the gate drive but slows down the IGBT switching speed. The stability issues of the closed loop AGDs based on gate current control [15–19] are different to that of the closed loop AGDs based on gate voltage control [7–14]. Unfortunately, there is no paper systematically analyzing the stability issues for the closed loop AGDs based on gate current control. Additionally, the previous works [7–9] [11] have neglected the influence of the parasitic inductance between the IGBT die emitter and gate drive ground on the feedback signals (Le), resulting in inaccurate modeling of diC/dt and dvC/dt detection circuits. Furthermore, practical stability compensation methods for closed loop AGDs are necessary but lacking. In this paper, the stability of the closed loop ACSD with diC/dt and dvC/dt feedback as shown in Fig. 1 is analyzed. In Section II, the small signal models of diC/dt and dvC/dt detection and processing circuits are presented considering Le which has significant influence on the stability but not discussed in literature. With the proposed models, Section III analyzes the influences of IGBT gate resistance/inductances and feedback circuit parameters on the stability using root locus plots, and the experimental results verify the analysis. Finally, conclusions are given in Section IV. With the proposed modeling and stability analysis, the ACSD can achieve good control performance and system stability.