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会员 基于解耦模块化开关单元的多并联SiC MOSFET对称电路布局
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  • 作者:
    何杨  , 杨得秋  , 张军明  
  • 页数:
    6
  • 页码:
    2283 - 2288
  • 资源:
  • 文件大小:
    0.81M
摘要
Parallel connection of silicon carbide (SiC) metal-oxide-semiconductor transistors (MOSFETs) are widely used in large-current-capacity applications or power modules. However, current imbalance caused by the tolerance of device parameters or asymmetric circuit layout is still a challenge for the reliability of the paralleled devices. In this paper, an equivalently symmetric power circuit layout based on decoupled paralleled modular switching cells (MSCs) is presented. The current sharing mechanisms of typical asymmetric power circuit layouts are firstly illustrated. The layout with distributed DC decoupling capacitors turns out to have the potential to modify the current paths but requires further optimization. Based on the mechanisms, the construction of the symmetric layout with the concept of MSC is elaborated. DC decoupling capacitors are used to decouple the paralleled symmetric MSCs. Experiments are finally carried out to validate the analysis. The test results show that the peak current imbalance is reduced to only 4.1% by the equivalently symmetric power circuit layout, which confirms the effect of decoupled MSCs method.
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