Driven by the demand for higher efficiency, wide bandgap devices represented by silicon carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs) are utilized in the power electronic converters. As an important means to obtain switching voltage information of high-side device in a half-bridge configuration, differential probes used for floating voltage measurement are presented with new challenges, such as high bandwidth and low intrusion. In this paper, the effect of non-ideal connection between the probe and the DUT is analyzed with the aim to reveal the intrusion of voltage probes. Then, a detailed explanation about the development of an electric field coupling differential voltage probe with a bandwidth of up to 270 MHz and an input capacitance of 1.8 pF is given. The probe made of a four-layer printed circuit board (PCB) has millimeter-level volume and low cost, which makes it promising in power electronics with high power density. Finally, the performance of the proposed probe is verified by simulation analysis and double pulse test.