中国电源学会电子资源平台

会员 Low forward voltage of 1.2kV-20A 4H-SiC JBS rectifiers: the impact of thinning process

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2021/01/01

作者：

Rui Liu ， Xiping Niu ， Yunlai An ， Fei Yang ， Lixin Tian ， Junmin Wu ， Ling Sang ， Wenting Zhang ， Ling Li
页数：

5
页码：

952 - 956
资源：
文件大小：

0.31M

摘要

This paper reports characteristics of 1.2kV/20A 4H-SiC Junction Barrier controlled Schottky(JBS) rectifiers manufactured in a 6-inch SiC power device laboratory of State Grid. The backside thinning and laser annealing processes are used in the SiC JBS rectifiers, which adopts a shallow trench structure. Compared with the traditional process, the forward on state voltage drop(@20A) of this diode with thinning and laser annealing processes is reduced from 1.71V to 1.38V at 25 ℃(Chip area is 3mm\*3mm). After using the package of TO247-2L, the voltage drop is reduced from 2.8V to 2.4V at temperature up to 175℃. The leakage current remained below 50μA@1.2kV even up to 175℃.