中国电源学会电子资源平台

会员 Low forward voltage of 1.2 kV-20 A 4H-SiC JBS rectifiers: the impact of thinning process

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2021/01/01

作者：

Rui Liu ， Fei Yang ， Ling Sang ， Xiping Niu ， Lixin Tian ， Wenting Zhang ， Yunlai An ， Junmin Wu ， Ling Li
页数：

5
页码：

952 - 956
资源：
文件大小：

0.31M

摘要

This paper reports characteristics of 1.2 kV/20 A 4H-SiC Junction Barrier controlled Schottky (JBS) rectifiers manufactured in a 6-inch SiC power device laboratory of State Grid. The backside thinning and laser annealing processes are used in the SiC JBS rectifiers, which adopts a shallow trench structure. Compared with the traditional process, the forward on-state voltage drop (@20 A) of this diode with thinning and laser annealing processes is reduced from 1.71 V to 1.38 V at 25 ℃ (Chip area is 3 mm × 3 mm). After using the package of TO-247-2L, the voltage drop is reduced from 2.8 V to 2.4 V at temperature up to 175 ℃. The leakage current remained below 50 μA @1.2 kV even up to 175 ℃.