Latest dual-gate(2G) monolithic bidirectional(MB) gallium nitride(GaN) enhancement-mode field effect transistors (e-FETs) enable a performance breakthrough of current DC-link inverters, e.g., in terms of power conversion efficiency, power density, cost and complexity. In fact, a single 2G MB GaN e-FET can replace the two anti-series connected conventional power semiconductors required in this inverter topology, realizing a f our-quadrant(AC) switch with bidirectional voltage blocking capability and allowing controlled bidirectional current flow. Furthermore, as shown in this paper in case of three-phase(3-Φ) buck-boost(bB) current source inverter(CSI) systems comprising a DC-link current impressing buck-type DC/DC input stage and a subsequent boost-type 3-Φ current DC-link inverter output stage, a variable DC-link current control strategy, based on a Synergetic Control concept, can be applied to significantly reduce the switching losses occurring in the 3-Φ inverter. This strategy is denominated two-third pulse-width modulation(2/3-PWM), since by properly shaping the DC-link current with the input stage, the desired 3-Φ sinusoidal load phase currents can be generated by switching, in each switching period, only two out of the three phases of the output stage. Based on comprehensive circuit simulations and analytical calculations, a detailed explanation of the developed modulation and control schemes in different operating conditions is provided, and the reduction of losses enabled by 2/3-PWM is confirmed. Next, the seamless transition of the 3-Φ bB CSI system from 2/3-PWM to conventional 3/3-PWM is demonstrated. Finally, a 3.3 kW 3-Φ bB CSI system, applying 2/3-PWM and employing research samples of 2G MB GaN e-FETs in the 3-Φ inverter, is estimated to achieve an efficiency of 98.4% and a power density of 18 kW/dm 3 (295 W/in 3 ) at a switching frequency of 140 kHz.