This paper presents a novel approach to evaluate the semiconductor devices for power conversion applications, focusing on the real-life usage scenarios. Firstly, 1.7 kV SiC MOSFET at room temperature is examined via proposed evaluation board. Unlike conventional double pulse test (DPT) circuit, the inevitable presence of parasitic elements in practical applications are considered in the characterization board. Furthermore, a passive voltage balancing circuit is integrated into the experimental evaluation board to mitigate the dynamic voltage difference between the series-connected devices. An evaluation bench is accordingly built in LTspice, leverages the practical board design that incorporates parasitic elements. The proposed evaluation bench enables the swift selection and validation of the voltage balancing component. In addition to characterize the switching performance of high voltage SiC MOSFETs for practical use, the proposed evaluation bench using LTspice can also guide users in developing solutions for using series-connected power devices.