SiC MOSFETs are widely used in high switching frequency and high power applications; however, driving voltage spikes are difficult to avoid, which easily exacerbate the aging of gate oxide. At present, due to the limited functions of aging test equipment in the market, comprehensive study on the effect of driving voltage spikes on gate oxide life is absent. To that end, this paper proposes a gate oxide lifetime test system, which can not only emulate the driving voltage spike flexibly, but also can accurately detect the threshold voltage drift and the leakage current, so as to facilitate the aging and lifetime evaluation of SiC devices in the presence of driving voltage spikes. All the circuits of the aging system proposed in this paper are addressed in detail and functionally verified by experiments.