The wide bandgap semiconductor material 4H-SiC has high reliability epitaxy, high electron mobility, ultra-high band gap width, large electron saturation drift speed, large critical breakdown field strength and low mobility, low anisotropy and other excellent characteristics. Power devices based on SiC materials have been widely used in power grids, ships, high-speed rail, electric vehicles and other fields. Among many power electronic devices, SiC MOSFETs have been used in UHV DC transmission, electric vehicles and other fields due to their excellent high-frequency characteristics, high-temperature characteristics, and high-speed switching characteristics. This article takes 30 1200V/20A SiC MOSFETs developed by the Global Energy Interconnection Research Institute Co. Ltd as the research object, and evaluates the changes in the dynamic and static characteristics of SiC MOSFETs through standard deviation, skewness, kurtosis, deviation and coefficient of variation. The specific parameters include on-resistance R_DS(on), threshold voltage V_GS(th), transconductance g_fs, drain-source capacitance C_DS, gate-drain capacitance C_GD, gate-source capacitance C_GS, rise time t_r, fall time t_f, turn-on delay t_d(on) and turn-off delay t_d(off).